Aluminum nitride ceramic
The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests.(attached: Regular specification of AlN substrate and wafer)
Other dimension and thickness which not listed are available upon requests.
Regular specification of AlN Aluminum Nitride substrates and Aluminum Nitride wafer
Thickness(mm)
L*W( mm)
0.385
2″* 2″ 50.8mm*50.8mm
3″* 3″ 76.2mm*76.2mm
4″* 4″ 101.6mm*101.6mm
4.5″* 4.5″ 114.3mm*114.3mm
0.5
0.635
1
Diameter(mm)
1
Φ16 Φ19
Φ20 Φ26
Φ30 Φ35
Φ40 Φ45
Φ50 Φ52
Φ60
Φ75
Φ80
1.2
1.5
2
2.5
PS: Aluminum Nitride substrate ceramic substrate,Aluminum Nitride tube,Aluminum Nitride pipe,Aluminum Nitride rod,Aluminum Nitride crucibles,Aluminum Nitride ring,Aluminum Nitride plate,Aluminum Nitride disc,Aluminum Nitride parts etc.
Property Index of ALN Aluminum Nitride ceramics
Property Sort
Characteristic
Unit
AN170
AN200
AN220
Basic Properties
Appearance/color
Gray
Gray
Beige
Water absorption
%
0
0
0
Volume density
g/cm3
≥3.30
≥3.30
≥3.26
Surface roughness Ra
μm
0.1~0.6
0.1~0.6
0.1~0.6
Camber
(length ‰)
≤2‰
≤2‰
≤2‰
Thermal Properties
Thermal conductivity (20-30℃)
W/m.k
≥170
≥200
≥220
Coefficient of Thermal expansivity (20℃~300℃)
×10-6/℃
4.4
4.6
4.5
Coefficient of Thermal expansivity(40℃~800℃)
×10-6/℃
5.2
5.2
5.2
Mechanical Properties
Flexural/Bending strength
MPa
≥420
≥300
≥200
Modulus of elasticity
GPa
320
310
310
Moh''s hardness
-
8
8
8
Electrical properties
Dielectric constant (1MHz 25℃)
-
8.9
8.6
8.5
(1MHz 25℃) Dielectric loss
×10-4
2.8
2
2
Dielectric strength
KV/mm
≥17
≥16
≥15
Volume resistivity
Ω.cm
≥1014
≥1014
≥1013