Aluminum Nitride(AlN) ceramic substrate

Aluminum Nitride(AlN)

Aluminum Nitride(AlN) ceramic substrate

Aluminum Nitride(AlN) ceramic is a covalent bond compound, atomic crystal, a diamond-like nitrate, hexagonal crystal system, non-toxin, white or gray white, theoretic bulk density 3.26g/cm3. AlN ceramic has following properties:(1)High thermal conductivity (theoretic value 320W/m.K)
(2)High electricity resistance
(3)Low coefficient of heat expansion(4.5X10-6℃)Good march with Si(3.5~4×10-6℃) and GaAs(6×10-6℃) 
(4)Excellent electricity properties(Dielectric constant, dielectric loss, bulk resistivity, dielectric strength). 
(5)Good mechanic properties 
(6)Excellent corrosion resistance 
(7) Good optical transmission propertyAlN ceramic has become an ideal material for heat radiation and package in industries of large scale IC, semiconductor module, high power IC and high power components, been widely utilized in HBLED, UVLED, high power IC, power module, RF/microwave communication,automotive,microelectronic semiconductor, image transmission.

Regular specification of AlN substrate and wafer
Thickness(mm) L*W( mm)
0.385 2* 2        50.8mm*50.8mm 3* 3          76.2mm*76.2mm 4* 4           101.6mm*101.6mm 4.5* 4.5         114.3mm*114.3mm
0.500
0.635
1.000
Diameter(mm)
1.000 Φ16   Φ19 Φ20                   Φ26 Φ30   Φ35 Φ40                   Φ45 Φ50   Φ52 Φ60 Φ75 Φ80
1.200
1.500
2.000
2.500
PS: Other dimension and thickness which not listed are available upon requests.

Through laser machine scribing, cutting, and drilling, we can process  AlN  substrate with high accuracy and absolute consistency upon customer’s request.(attached: the technical parameters schedule of the scribed products)


Your name (required)

Your Email (required)

Topic

Files

Message

replica watches