Aluminum Nitride Plate

Aluminum Nitride Plate

Product

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Alumina Ceramic Substrates

Alumina Ceramic Disc

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Alumina Ceramic Roller

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Alumina Ceramic Ring

Alumina Ceramic Part

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RBSiC

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R-SiC

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Aluminum Nitride Tube

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Aluminum Nitride Disc

Aluminum Nitride Part

Boron Nitride Ceramics (BN)

Boron Nitride Tube

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Boron Nitride Ring

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Aluminum Nitride Plate

Aluminum nitride (AlN) plate is a ceramic substrate material with high thermal conductivity and excellent electrical insulation properties. It is widely used in electronic and semiconductor industries for its ability to dissipate heat and withstand high voltages.

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Product Description

Features & Benefits

  • High thermal conductivity: 4-5 times higher than alumina
  • High electrical insulation: excellent dielectric properties
  • High strength and hardness: comparable to sapphire
  • Low coefficient of thermal expansion: close to that of silicon
  • Good thermal shock resistance: able to withstand rapid temperature changes

Markets & Applications

  • Electronic and semiconductor industries: as substrates for power modules, IC packages, and LED lighting
  • Aerospace and defense: as thermal management components for high-power electronics
  • Medical devices: as implantable electronic components due to biocompatibility and low electrical impedance
  • High-temperature processing industries: as crucibles and thermocouple protection tubes in furnaces and kilns.
Property Index of ALN  Aluminum Nitride ceramics
Property Sort Characteristic Unit AN170 AN200 AN220
Basic Properties Appearance/color Gray Gray Beige
Water absorption % 0 0 0
Volume density g/cm3 ≥3.30 ≥3.30 ≥3.26
Surface roughness Ra μm 0.1~0.6 0.1~0.6 0.1~0.6
Camber (length ‰) ≤2‰ ≤2‰ ≤2‰
Thermal Properties Thermal conductivity  (20-30℃) W/m.k ≥170 ≥200 ≥220
Coefficient of
Thermal expansivity (20℃~300℃)
×10-6/℃ 4.4 4.6 4.5
Coefficient of
Thermal expansivity(40℃~800℃)
×10-6/℃ 5.2 5.2 5.2
Mechanical Properties Flexural/Bending strength MPa ≥420 ≥300 ≥200
Modulus of elasticity GPa 320 310 310
Moh''s hardness - 8 8 8
Electrical properties Dielectric constant  (1MHz 25℃) - 8.9 8.6 8.5
(1MHz 25℃) Dielectric loss ×10-4 2.8 2 2
Dielectric strength KV/mm ≥17 ≥16 ≥15
Volume resistivity Ω.cm ≥1014 ≥1014 ≥1013

 

Regular specification of AlN  Aluminum Nitride substrates/plate and Aluminum Nitride wafer
Thickness(mm) L*W( mm)
0.381

2″* 2″                            50.8mm*50.8mm

3″*3″                         76.2mm*76.2mm 4″* 4″           101.6mm*101.6mm 4.5″* 4.5″         114.3mm*114.3mm 127*127mm
138*190mm
0.5
0.635
1
1.5
Thickness(mm) Diameter(mm)
1

Φ16

Φ19

Φ20

Φ26

Φ30

Φ35

Φ40

Φ45

Φ50

Φ52

Φ60 Φ75 Φ80 Φ200
1.2
1.5
2
2.5
3
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Other dimension and thickness which not listed are available upon requests.