SiC is a compound semiconductor material composed of silicon (Si) and carbon (C). Its binding force is very strong, and it is very stable in thermal, chemical and mechanical aspects. Important parameters for power components are excellent. As a component, it has lower resistance than Si semiconductor, can work at high speed and high temperature, and can greatly reduce the energy loss in power conversion process from power transmission to actual equipment. Wide band gap semiconductor materials and power devices represented by SiC are recognized as a revolution in the application of electronic power. They have attracted extensive attention and attention from governments and industries all over the world, and will become a strategic industry with huge growth potential.